| PART |
Description |
Maker |
| SPP80N06S2-09 SPB80N06S2-09 |
Low Voltage MOSFETs - TO220/263; 80 A; 55 V; NL; 9.1 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP77N06S2-12 SPB77N06S2-12 |
OptiMOS Power-Transistor
Low Voltage MOSFETs - TO220/263; 77 A; 55V; NL; 12 mOhm
|
Infineon Technologies A...
Infineon Technologies AG
|
| IPP09N03LA IPI09N03LA |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 8.9mOhm, 50A, LL
OptiMOS®2 - Power packages
|
Infineon
|
| 2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE
NPN Epitaxial Base Transistor（TO220 Metal PackageNPN外延晶体管（TO220 金属封装，高可靠性）)
DIODE SCHOTTKY SINGLE 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BUZ32 BUZ32SMD |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 9.5A, NL
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.4 Ohm, 9.5A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP47N10 SPB47N10 SPI47N10 |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| KMD7D5P40QA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| KMB7D0DN40QB |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| KMB4D0N30SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| KMD6D0DN40Q |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
